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| PHOTODIODE InGaAs PIN photodiode G6849 series Quadrant type Features G6849 : B2 mm quadrant element G6849-01: B1 mm quadrant element l Low noise l High reliability Applications l Active area l Spot light position detection l Measurement equipment s General ratings Parameter Package Active area G6849 TO-5 2/quadrant 1/quadrant G6849-01 Unit mm s Absolute maximum ratings (Ta=25 C) Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Topr Tstg Value 5 -40 to +85 -55 to +125 Unit V C C s Electrical and optical characteristics (Ta=25 C, per 1 element) Parameter Spectral response range P e ak sensitivity wavelength Photo sensitivity Dark current Cut-off frequency Terminal capacitance Shunt resistance Detectivity Noise equivalent power Symbol p S ID fc Ct Rsh D NEP =1.3 m =1.55 m VR=1 V VR=1 V, RL=50 =1.3 m, -3 dB VR=1 V, f=1 MHz VR=10 mV =p =p Condition Min. G6849 Typ. 0.9 to 1.7 1.55 0.9 0.95 0.5 30 100 50 5 x 1012 2 x 10-14 Max. 5 Min. G6849-01 Typ. 0.9 to 1.7 1.55 0.9 0.95 0.15 120 20 200 5 x 1012 1 x 10-14 Max. 1.5 Unit m m A/W nA MHz pF M cm*Hz1/2/W W/Hz1/2 - - 1 InGaAs PIN photodiode s Spectral response 1 (Typ. Ta=25 C) G6849 series (Typ. Ta=25 C) s Photo sensitivity temperature characteristic (Typ. Ta=25 C) 2 s Dark current vs. reverse voltage 1 A TEMPERATURE COEFFICIENT (%/C) PHOTO SENSITIVITY (A/W) 100 nA 1 DARK CURRENT 10 nA 0.5 G6849 1 nA 0 100 pA G6849-01 0 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -1 0.8 1.0 1.2 1.4 1.6 1.8 10 pA 0.01 0.1 1 10 100 WAVELENGTH (m) KIRDB0002EB WAVELENGTH (m) KIRDB0042EA REVERSE VOLTAGE (V) KMIRB0016EB s Terminal capacitance vs. reverse voltage 10 nF (Typ. Ta=25 C, f=1 MHz) s Shunt resistance vs. ambient temperature 100 G (Typ. VR=10 mV) TERMINAL CAPACITANCE 10 G G6849 SHUNT RESISTANCE 1 nF 1 G G6849-01 100 M G6849 10 M 100 pF G6849-01 10 pF 1 pF 0.01 0.1 1 10 1 M -40 -20 0 20 40 60 80 100 REVERSE VOLTAGE (V) KMIRB0015EB AMBIENT TEMPERATURE (C) KMIRB0014EA s Dimensional outlines (unit: mm) G6849 9.1 0.2 8.1 0.1 ACTIVE AREA WINDOW 5.9 0.1 2 ACTIVE AREA G6849-01 9.1 0.2 8.1 0.2 WINDOW 5.9 0.2 1 c d a b d c b a 0. 0. 1 03 (2.5 0.3) 4.1 0.2 13.0 2.0 0.45 LEAD 0.45 LEAD 5.84 3.1 0.6 ANODE a NC ANODE b NC ANODE c NC ANODE d CATHODE (COMMON) KIRDA0059EA 5.84 3.1 0.6 ANODE a NC ANODE b NC ANODE c NC ANODE d CATHODE (COMMON) KIRDA0143EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2002 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 13.0 2.0 0.8 0.5 0.8 0.5 4.1 0.2 PHOTOSENSITIVE SURFACE PHOTOSENSITIVE SURFACE (2.5 0.3) DETAILS OF PHOTODIODE DETAILS OF PHOTODIODE 2 Cat. No. KIRD1042E02 Feb. 2002 DN |
Price & Availability of G6849-01
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